Transition-edge sensors (TESs) have shown remarkable energy resolution and photon-number resolving ability. In this paper, we report the fabrication and characterization of Ti/Au optical TESs for the detection of single photon at the telecommunication wavelength 1550 nm. A SiO2/SiNx antireflection coating is deposited on top of TESs by an inductively coupled plasma-assisted plasma-enhanced chemical vapor deposition (ICP-PECVD) process to improve the detection efficiency. Ti/Au (50/60 nm) TES with a small sensitive area 10 μm× 10 μm shows an energy resolution of 0.12 eV. The TES with a large sensitive area 20 μm× 20 μm can discriminate up to 55 incident photons and the detection efficiency is 46%.
Development of Ti/Au Transition-Edge Sensors for Single-Photon Detection / Xiaolong, Xu; Sun, Xiaoying; Chen, Jian; Rajteri, Mauro; Garrone, Hobey; Pepe, Carlo; Wan, Li; Jinjin, Li; Zhang, Mingyu; Tianjia, Bu; Gao, Ying; Sun, Tianbao; Wang, Xueshen. - In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. - ISSN 1051-8223. - 34:3(2024), pp. 1-4. [10.1109/tasc.2024.3350569]
Development of Ti/Au Transition-Edge Sensors for Single-Photon Detection
Chen, Jian;Rajteri, Mauro;Garrone, Hobey;Pepe, Carlo;Li, Wan;Zhang, Mingyu;
2024
Abstract
Transition-edge sensors (TESs) have shown remarkable energy resolution and photon-number resolving ability. In this paper, we report the fabrication and characterization of Ti/Au optical TESs for the detection of single photon at the telecommunication wavelength 1550 nm. A SiO2/SiNx antireflection coating is deposited on top of TESs by an inductively coupled plasma-assisted plasma-enhanced chemical vapor deposition (ICP-PECVD) process to improve the detection efficiency. Ti/Au (50/60 nm) TES with a small sensitive area 10 μm× 10 μm shows an energy resolution of 0.12 eV. The TES with a large sensitive area 20 μm× 20 μm can discriminate up to 55 incident photons and the detection efficiency is 46%.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/3002289