Transition-edge sensors (TESs) have shown remarkable energy resolution and photon-number resolving ability. In this paper, we report the fabrication and characterization of Ti/Au optical TESs for the detection of single photon at the telecommunication wavelength 1550 nm. A SiO2/SiNx antireflection coating is deposited on top of TESs by an inductively coupled plasma-assisted plasma-enhanced chemical vapor deposition (ICP-PECVD) process to improve the detection efficiency. Ti/Au (50/60 nm) TES with a small sensitive area 10 mu mx 10 mu m shows an energy resolution of 0.12 eV. The TES with a large sensitive area 20 mu mx 20 mu m can discriminate up to 55 incident photons and the detection efficiency is 46%.

Development of Ti/Au Transition-Edge Sensors for Single-Photon Detection / Xu, X.; Sun, X.; Chen, J.; Rajteri, M.; Garrone, H.; Pepe, C.; Li, W.; Li, J.; Zhang, M.; Bu, T.; Gao, Y.; Sun, T.; Wang, X.. - In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. - ISSN 1051-8223. - STAMPA. - 34:3(2024), pp. 1-4. [10.1109/TASC.2024.3350569]

Development of Ti/Au Transition-Edge Sensors for Single-Photon Detection

Garrone H.;Pepe C.;
2024

Abstract

Transition-edge sensors (TESs) have shown remarkable energy resolution and photon-number resolving ability. In this paper, we report the fabrication and characterization of Ti/Au optical TESs for the detection of single photon at the telecommunication wavelength 1550 nm. A SiO2/SiNx antireflection coating is deposited on top of TESs by an inductively coupled plasma-assisted plasma-enhanced chemical vapor deposition (ICP-PECVD) process to improve the detection efficiency. Ti/Au (50/60 nm) TES with a small sensitive area 10 mu mx 10 mu m shows an energy resolution of 0.12 eV. The TES with a large sensitive area 20 mu mx 20 mu m can discriminate up to 55 incident photons and the detection efficiency is 46%.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2990940
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