Shear horizontal waves in a multiferroic composite semiconductor structure

Piezoelectric semiconductors (PSs) possess the physical properties of piezoelectric and semiconductor simultaneously. When a piezomagnetic (PM) material is added to the PS, the composite structures will exhibit the comprehensive mageto-electro-semiconductive (MES) coupling effects. In this paper, the propagation characteristics of shear horizontal (SH) waves in a multiferroic composite semiconductor structure are investigated, where a n-type PS thin plate is perfectly bonded to a semi-infinite PM substrate. Based on the three-dimensional macroscopic theory for PS and PM, the dispersion equations are derived analytically. Numerical examples are presented to study the effects of steady-state carrier density, cover thickness, and material properties on the phase velocity and attenuation of SH wave systematically. The developments of various electromechanical fields through the thickness of the layers are discussed. The results show that initial electron concentration (n0) has an important effect on the distribution of most physical quantities such as displacement, stress, electric potential and electric polarization, but magnetic potential and magnetic flux density are insensitive to n0. The piezoelectric constant e15 and piezomagnetic constant f15 have different effects on the SH wave propagation and magnetic potential distribution. The theoretical results could be helpful for the analysis and design of PS-PM structures or related surface acoustic wave (SAW) devices.