Rotation effects on propagation of shear horizontal surface waves in piezomagnetic-piezoelectric semiconductor layered structures

In this work, the propagation characteristics of shear horizontal waves in a piezomagnetic and piezoelectric semiconductor layered structure with rotation are studied. The dispersion equation of shear horizontal waves in the rotating multiferroic composite semiconductor is obtained in the framework of coupled field theory including Coriolis and centrifugal forces. By solving the dispersion equation in complex domain, the influence of rotation on the shear horizontal waves is deeply analyzed, and the effects of steady-state carrier concentration and biasing electric field in the presence and absence of rotation are obtained, respectively. Similar to the semiconductor properties, the results show that the rotation will also cause dispersion and attenuation of shear horizontal waves. Besides, the wave speed decreases with the increase of the angular rate and the frequency shift occurs. The rotation sensitivity at long wavelengths near the surface is greater than those at short wavelengths deep into the half-space. Importantly, the increase in wave speed and amplitude gain can be achieved by applying an appropriate biasing electric field regardless of rotation or non-rotation. Specially, several critical points such as attenuation from large to small with rotation, wave speed from decrease to increase and wave amplitude from attenuation to gain in the biasing electric field are obtained. The results could be helpful for the design of surface acoustic wave gyroscopes and piezoelectric semiconductor devices related to magnetic fields.