In this work, we explore pattern formation dynamics across a diffusively coupled Memristor Cellular Nonlinear Network (MCNN), which is composed of identical cells with locally active memristors. We bias the cells on the edge-of-chaos, introduce a systematic design procedure to induce complexity in the array, and extract the element values analytically in a parametric form. In order to enhance the stability and speed of the numerical simulations, we apply a simple variable transformation to a core memristor model while we include the additional effect of parasitic resistors to investigate the locally active dynamics of a VO2 device. We first take a close look at the effect of the linear coupling resistor on pattern formation, and later study how nonlinearly-resistive coupling, based upon tangent hyperbolic law, affect the emergence of complex patterns. Simulation results reveal that a variety of static patterns with different characteristics can emerge across the proposed MCNN.
Pattern formation dynamics in a Memristor Cellular Nonlinear Network structure with a numerically stable VO2 memristor model / Demirkol, As; Ascoli, A; Messaris, I; Tetzlaff, R. - In: JAPANESE JOURNAL OF APPLIED PHYSICS. - ISSN 0021-4922. - ELETTRONICO. - 61:SM(2022), pp. 1-11. [10.35848/1347-4065/ac8489]
Pattern formation dynamics in a Memristor Cellular Nonlinear Network structure with a numerically stable VO2 memristor model
Ascoli A;
2022
Abstract
In this work, we explore pattern formation dynamics across a diffusively coupled Memristor Cellular Nonlinear Network (MCNN), which is composed of identical cells with locally active memristors. We bias the cells on the edge-of-chaos, introduce a systematic design procedure to induce complexity in the array, and extract the element values analytically in a parametric form. In order to enhance the stability and speed of the numerical simulations, we apply a simple variable transformation to a core memristor model while we include the additional effect of parasitic resistors to investigate the locally active dynamics of a VO2 device. We first take a close look at the effect of the linear coupling resistor on pattern formation, and later study how nonlinearly-resistive coupling, based upon tangent hyperbolic law, affect the emergence of complex patterns. Simulation results reveal that a variety of static patterns with different characteristics can emerge across the proposed MCNN.File | Dimensione | Formato | |
---|---|---|---|
Pattern formation dynamics in a Memristor Cellular Nonlinear Network structure with a numerically stable VO2 memristor model.pdf
accesso aperto
Descrizione: Articolo in Rivista
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Creative commons
Dimensione
5.59 MB
Formato
Adobe PDF
|
5.59 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2988526