Archivio Istituzionale della RicercaThis article presents the design and experimental characterization of a two-way gallium nitride on silicon carbide (GaN-SiC) monolithic Doherty power amplifier (DPA) for deep back-off operation in the 5G FR2 band. The amplifier, including two driver stages on-chip, achieves 35-dBm output power, 30% power-added efficiency, and 16-dB gain at saturation at 29 GHz. It favorably compares with the present state of the art, maintaining a power-added efficiency higher than 27%, 28%, and 22% at 6-, 9-, and 12-dB output power back-off, respectively.
A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range / Giofrè, Rocco; Piacibello, Anna; Camarchia, Vittorio; Colantonio, Paolo. - In: IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS. - ISSN 2771-957X. - STAMPA. - 34:3(2024), pp. 314-317. [10.1109/LMWT.2024.3350435]
A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range
Piacibello, Anna;Camarchia, Vittorio;
2024
Abstract
This article presents the design and experimental characterization of a two-way gallium nitride on silicon carbide (GaN-SiC) monolithic Doherty power amplifier (DPA) for deep back-off operation in the 5G FR2 band. The amplifier, including two driver stages on-chip, achieves 35-dBm output power, 30% power-added efficiency, and 16-dB gain at saturation at 29 GHz. It favorably compares with the present state of the art, maintaining a power-added efficiency higher than 27%, 28%, and 22% at 6-, 9-, and 12-dB output power back-off, respectively.
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https://hdl.handle.net/11583/2986920