Archivio Istituzionale della RicercaThis paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.
A new low gain avalanche diode concept: the double-LGAD / Carnesecchi, F., Strazzi, S., Alici, A., Arcidiacono, R., Cartiglia, N., Cavazza, D., Durando, S., Ferrero, M., Margotti, A., Menzio, L., Nania, R., Sabiu, B., Scioli, G., Siviero, F., Sola, V., Vignola, G.. - In: THE EUROPEAN PHYSICAL JOURNAL PLUS. - ISSN 2190-5444. - ELETTRONICO. - 138:(2023), pp. 1-7. [10.1140/epjp/s13360-023-04621-x]
A new low gain avalanche diode concept: the double-LGAD
Durando, S.;
2023
Abstract
This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.
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Descrizione: A new low gain avalanche diode concept: the double-LGAD
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2a Post-print versione editoriale / Version of Record
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https://hdl.handle.net/11583/2985097