Direct laser writing by two-photon lithography has been enhanced substantially during the past two decades by techniques borrowed from stimulated emission depletion (STED) microscopy. However, STED-inspired lithography was so far limited to radical polymerizations, mostly to acrylates and methacrylates. Cationic polymers did not derive benefits from this technique. Specifically, epoxide polymerization, which plays a paramount role in semiconductor clean-room technology, has not yet been reported with a second, depleting laser focus in the outer rim of the point spread function. We now found that using a thioxanthone as a sensitizer and sulfonium or iodonium salts as photoinitiators enables at least partial optical on/off switching of two-photon polymerization and, in the case of the sulfonium salt, allows for writing epoxy lines with widths shrunk by approx. two-thirds compared to lines written with two-photon polymerization alone.

STED-Inspired Cationic Photoinhibition Lithography / Islam, Sourav; Sangermano, Marco; Klar, Thomas A. - In: JOURNAL OF PHYSICAL CHEMISTRY. C. - ISSN 1932-7447. - 127:37(2023), pp. 18736-18744. [10.1021/acs.jpcc.3c04394]

STED-Inspired Cationic Photoinhibition Lithography

Sangermano, Marco;
2023

Abstract

Direct laser writing by two-photon lithography has been enhanced substantially during the past two decades by techniques borrowed from stimulated emission depletion (STED) microscopy. However, STED-inspired lithography was so far limited to radical polymerizations, mostly to acrylates and methacrylates. Cationic polymers did not derive benefits from this technique. Specifically, epoxide polymerization, which plays a paramount role in semiconductor clean-room technology, has not yet been reported with a second, depleting laser focus in the outer rim of the point spread function. We now found that using a thioxanthone as a sensitizer and sulfonium or iodonium salts as photoinitiators enables at least partial optical on/off switching of two-photon polymerization and, in the case of the sulfonium salt, allows for writing epoxy lines with widths shrunk by approx. two-thirds compared to lines written with two-photon polymerization alone.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2983215