Wide bandgap (Eg) perovskite solar cells (PSCs) are emerging as the preferred choice for top cells in a tandem architecture with crystalline silicon solar cells. Among the wide bandgap perovskites, a mixed cation mixed halide composition containing CsyFA1-yPbI3-xBrx is a popular choice because the presence of bromine widens the bandgap and addition of cesium stabilizes the crystal structure. These perovskite layers are commonly fabricated using one-step spin coating technique; however, sequential spin coating followed by dip coating has been successful in offering better control over the crystallization process for low bandgap absorber layers. In this paper, the fabrication of a Cs0.2FA0.8PbI3-xBrx perovskite absorber layer using the sequential deposition route is reported. The concentration of bromine was varied in the range 0 <= x <= 1 and optical, structural, and morphological properties of the films were studied. As the concentration was increased, the perovskite showed better crystallinity and the presence of large grains with high surface roughness, indicating the formation of the CsPbBr3 phase. Optically, the perovskite films exhibited higher absorbance in the ultraviolet (UV) range between 300 and 500 nm, hence up to x = 0.3 they can be profitably employed as a wide bandgap photon absorber layer in solar cell applications.

Investigating the Sequential Deposition Route for Mixed Cation Mixed Halide Wide Bandgap Perovskite Absorber Layer / Ahmad, Muneeza; Shahzad, Nadia; Tariq, Muhammad Ali; Sattar, Abdul; Pugliese, Diego. - In: ENERGIES. - ISSN 1996-1073. - ELETTRONICO. - 14:24(2021). [10.3390/en14248401]

Investigating the Sequential Deposition Route for Mixed Cation Mixed Halide Wide Bandgap Perovskite Absorber Layer

Pugliese, Diego
2021

Abstract

Wide bandgap (Eg) perovskite solar cells (PSCs) are emerging as the preferred choice for top cells in a tandem architecture with crystalline silicon solar cells. Among the wide bandgap perovskites, a mixed cation mixed halide composition containing CsyFA1-yPbI3-xBrx is a popular choice because the presence of bromine widens the bandgap and addition of cesium stabilizes the crystal structure. These perovskite layers are commonly fabricated using one-step spin coating technique; however, sequential spin coating followed by dip coating has been successful in offering better control over the crystallization process for low bandgap absorber layers. In this paper, the fabrication of a Cs0.2FA0.8PbI3-xBrx perovskite absorber layer using the sequential deposition route is reported. The concentration of bromine was varied in the range 0 <= x <= 1 and optical, structural, and morphological properties of the films were studied. As the concentration was increased, the perovskite showed better crystallinity and the presence of large grains with high surface roughness, indicating the formation of the CsPbBr3 phase. Optically, the perovskite films exhibited higher absorbance in the ultraviolet (UV) range between 300 and 500 nm, hence up to x = 0.3 they can be profitably employed as a wide bandgap photon absorber layer in solar cell applications.
2021
File in questo prodotto:
File Dimensione Formato  
Post-print editoriale.pdf

accesso aperto

Descrizione: Post-print editoriale
Tipologia: 2a Post-print versione editoriale / Version of Record
Licenza: Creative commons
Dimensione 4.11 MB
Formato Adobe PDF
4.11 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2948572