PORTO @ 
Archivio Istituzionale della Ricerca
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishPrinted electronics using inks based on graphene and other two-dimensional materials can be used to create large-scale, flexible and wearable devices. However, the complexity of ink formulations and the polycrystalline nature of the resulting thin films have made it difficult to examine charge transport in such devices. Here we report the charge transport mechanisms of surfactant- and solvent-free inkjet-printed thin-film devices based on few-layer graphene (semimetal), molybdenum disulfide (MoS2, semiconductor) and titanium carbide MXene (Ti3C2, metal) by investigating the temperature, gate and magnetic-field dependencies of their electrical conductivity. We find that charge transport in printed few-layer MXene and MoS2 devices is dominated by the intrinsic transport mechanism of the constituent flakes: MXene exhibits a weakly localized 2D metallic behaviour at any temperature, whereas MoS2 behaves as an insulator with a crossover from 3D Mott variable-range hopping to nearest-neighbour hopping around 200 K. Charge transport in printed few-layer graphene devices is dominated by the transport mechanism between different flakes, which exhibit 3D Mott variable-range hopping conduction at any temperature.
Charge transport mechanisms in inkjet-printed thin-film transistors based on two-dimensional materials / Piatti, Erik; Arbab, Adrees; Galanti, Francesco; Carey, Tian; Anzi, Luca; Spurling, Dahnan; Roy, Ahin; Zhussupbekova, Ainur; Patel, Kishan A.; Kim, Jong M.; Daghero, Dario; Sordan, Roman; Nicolosi, Valeria; Gonnelli, Renato S.; Torrisi, Felice. - In: NATURE ELECTRONICS. - ISSN 2520-1131. - STAMPA. - 4:12(2021), pp. 893-905. [10.1038/s41928-021-00684-9]
| Titolo: | Charge transport mechanisms in inkjet-printed thin-film transistors based on two-dimensional materials | |
| Autori: | ||
| Data di pubblicazione: | 2021 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1038/s41928-021-00684-9 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| s41928-021-00684-9.pdf | Articolo principale - versione editoriale | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
| Piatti_NatElectron2021_postprint.pdf | Articolo principale - post print | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2947154
Copyright © 2022