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This work presents an investigation of carrier transport in GaN-based light-emitting diodes in the subthreshold forward-bias regime where tunneling processes are relevant. A quantum kinetic theory of trap-assisted tunneling is developed within the framework of the nonequilibrium Green’s function formalism. Based on fully nonlocal scattering self-energies computed in the self-consistent Born approximation and a multiband description of the electronic structure, the model provides access to spectral quantities, such as the local density of states and the current density, which are essential to understand the nature of the tunneling process. The quantum nonradiative recombination rates can be reproduced by the conventional Shockley-Read-Hall theory, provided that the classical charge is replaced with the correct quantum charge, which means that trap-assisted tunneling can be described with drift-diffusion solvers complemented with appropriate quantum corrections for the calculation of the local density of states. The subthreshold I-V characteristics and ideality factors predicted by the quantum kinetic model are in agreement with measurements.

Nonequilibrium Green's Function Modeling of Trap-Assisted Tunneling in In_{x}Ga_{1-x}N/GaN Light-Emitting Diodes / Gonzalez Montoya, Jesus Alberto; Tibaldi, Alberto; De Santi, Carlo; Meneghini, Matteo; Goano, Michele; Bertazzi, Francesco. - In: PHYSICAL REVIEW APPLIED. - ISSN 2331-7019. - STAMPA. - 16:4(2021), p. 044023. [10.1103/physrevapplied.16.044023]

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