This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two-stage stacked-FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful voltage combining architecture can be obtained in the frequency range of interest with the selected topology, based on a symmetric fork-like connection between the transistors. This proves the effectiveness of an appropriate electromagnetic simulation set-up in correctly predicting the crosstalk, which typically affects this structure, leading to a correct stacking operation.
Evaluation of a stacked-FET cell for high-frequency applications / Piacibello, A.; Costanzo, F.; Giofre, R.; Quaglia, R.; Colantonio, P.; Pirola, M.; Camarchia, V.. - In: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. - ISSN 0894-3370. - ELETTRONICO. - (2021).
|Titolo:||Evaluation of a stacked-FET cell for high-frequency applications|
|Data di pubblicazione:||2021|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1002/jnm.2881|
|Appare nelle tipologie:||1.1 Articolo in rivista|