The volatile nature of current variations in organic electrochemical transistors (OECTs) is limiting their use in neuromorphic applications that demand not only temporary variations but also permanent modifications of the resistance states. Only a limited number of papers report on OECTs modified to achieve memristive/synaptic properties. Here we report a novel approach developed using standard OECTs combined with a graphene film as a gate electrode. We demonstrate that the proposed architecture could be optimized to achieve typical and unique non-volatile characteristics with neuromorphic-synaptic functionalities.

Synaptic response in organic electrochemical transistor gated by a graphene electrode / Battistoni, S.; Peruzzi, C.; Verna, A.; Marasso, S. L.; Cocuzza, M.; Erokhin, V.; Iannotta, S.. - In: FLEXIBLE AND PRINTED ELECTRONICS. - ISSN 2058-8585. - ELETTRONICO. - 4:4(2019), p. 044002. [10.1088/2058-8585/ab4dce]

Synaptic response in organic electrochemical transistor gated by a graphene electrode

Verna A.;Marasso S. L.;Cocuzza M.;Iannotta S.
2019

Abstract

The volatile nature of current variations in organic electrochemical transistors (OECTs) is limiting their use in neuromorphic applications that demand not only temporary variations but also permanent modifications of the resistance states. Only a limited number of papers report on OECTs modified to achieve memristive/synaptic properties. Here we report a novel approach developed using standard OECTs combined with a graphene film as a gate electrode. We demonstrate that the proposed architecture could be optimized to achieve typical and unique non-volatile characteristics with neuromorphic-synaptic functionalities.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2860901