The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2–2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5–6 dB in the 2–2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2–3 GHz bandwidth.
S-band hybrid amplifiers based on hydrogenated diamond FETs / Ciccognani, W.; Colangeli, S.; Verona, C.; Di Pietrantonio, F.; Cannata, D.; Benetti, M.; Camarchia, V.; Pirola, M.; Longhi, P. E.; Verona Rinati, G.; Marinelli, M.; Limiti, E.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 10:1(2020).
|Titolo:||S-band hybrid amplifiers based on hydrogenated diamond FETs|
|Data di pubblicazione:||2020|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1038/s41598-020-75832-w|
|Appare nelle tipologie:||1.1 Articolo in rivista|