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EnglishThis work presents the characterization of a customized 110 nm CMOS technology fully depleted monolithic active pixel sensor test structure through micrometric laser beam. The test structures, with removed electronics, enabled transient current technique evaluation of the collected charge with two laser wavelengths. High charge collection uniformity and full depletion are proved using front-side illumination in the sensitive areas.
Micrometric laser characterization of a 300μm fully-depleted monolithic active pixel sensor in standard 110 nm CMOS technology / Giampaolo, R. A.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 15(2020), pp. C06052-C06052. ((Intervento presentato al convegno Innovative Particle and Radiation Detectors 2019 (IPRD19) [10.1088/1748-0221/15/06/C06052].
| Titolo: | Micrometric laser characterization of a 300μm fully-depleted monolithic active pixel sensor in standard 110 nm CMOS technology | |
| Autori: | ||
| Data di pubblicazione: | 2020 | |
| Rivista: | ||
| Abstract: | This work presents the characterization of a customized 110 nm CMOS technology fully depleted mon...olithic active pixel sensor test structure through micrometric laser beam. The test structures, with removed electronics, enabled transient current technique evaluation of the collected charge with two laser wavelengths. High charge collection uniformity and full depletion are proved using front-side illumination in the sensitive areas. | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 2020_JINST_15_C06052.pdf | Articolo Pubblicato - Micrometric laser characterization of a 300μm fully-depleted monolithic active pixel sensor in standard 110 nm CMOS technology | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
| GIAMPAOLO - IPRD19_POS copia autore.pdf | Articolo accettato senza stampa editore | 2. Post-print / Author's Accepted Manuscript |  | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2848072
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