This work presents the characterization of a customized 110 nm CMOS technology fully depleted monolithic active pixel sensor test structure through micrometric laser beam. The test structures, with removed electronics, enabled transient current technique evaluation of the collected charge with two laser wavelengths. High charge collection uniformity and full depletion are proved using front-side illumination in the sensitive areas.

Micrometric laser characterization of a 300μm fully-depleted monolithic active pixel sensor in standard 110 nm CMOS technology / Giampaolo, R. A.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - ELETTRONICO. - 15:(2020), pp. C06052-C06052. ((Intervento presentato al convegno Innovative Particle and Radiation Detectors 2019 (IPRD19) [10.1088/1748-0221/15/06/C06052].

Micrometric laser characterization of a 300μm fully-depleted monolithic active pixel sensor in standard 110 nm CMOS technology

Giampaolo R. A.
2020

Abstract

This work presents the characterization of a customized 110 nm CMOS technology fully depleted monolithic active pixel sensor test structure through micrometric laser beam. The test structures, with removed electronics, enabled transient current technique evaluation of the collected charge with two laser wavelengths. High charge collection uniformity and full depletion are proved using front-side illumination in the sensitive areas.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2848072