This brief aims at defining a class D of extended memristors by using a combination of fundamental algebraic circuit elements corresponding to ideal memristors and nonlinear resistors. By massaging the characteristics of the constitutive elements, such class D of extended memristors is able to approximate rectifying effects and asymmetric pinched hysteresis loops of real non-volatile switching memristor devices. Finally, it is shown that if the nonlinear resistors are described in terms of piecewise linear characteristics, then the flux-charge analysis method permits to analyze the dynamics of nonlinear circuits with extended memristors in D.

Flux-charge description of circuits with non-volatile switching memristor devices / Corinto, F.; Gilli, M.; Forti, M.. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. II, EXPRESS BRIEFS. - ISSN 1549-7747. - ELETTRONICO. - 65:5(2018), pp. 642-646. [10.1109/TCSII.2018.2825447]

Flux-charge description of circuits with non-volatile switching memristor devices

Corinto F.;Gilli M.;Forti M.
2018

Abstract

This brief aims at defining a class D of extended memristors by using a combination of fundamental algebraic circuit elements corresponding to ideal memristors and nonlinear resistors. By massaging the characteristics of the constitutive elements, such class D of extended memristors is able to approximate rectifying effects and asymmetric pinched hysteresis loops of real non-volatile switching memristor devices. Finally, it is shown that if the nonlinear resistors are described in terms of piecewise linear characteristics, then the flux-charge analysis method permits to analyze the dynamics of nonlinear circuits with extended memristors in D.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2842379