This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III–V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design.

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers / Camarchia, Vittorio; Quaglia, Roberto; Piacibello, Anna; Nguyen, Duy P.; Wang, Hua; Pham, Anh-Vu. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 68:7(2020), pp. 2957-2983. [10.1109/TMTT.2020.2989792]

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia, Vittorio;Piacibello, Anna;
2020

Abstract

This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III–V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2838656