Optical properties of thin Cu2ZnSnS4 films produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 26 μm. The optical band-gap width depending on substrate temperature is estimated; in optimal modes, it is equal to 1.47 eV. The study of electrical properties shows that Cu2ZnSnS4 possesses low charge-carrier mobility, μ = 1.9 cm2/(V s), at room temperature and hole concentration р = 5 × 1018 cm–3. Electron microscopy shows that the film possesses a polycrystalline structure with a crystallite size on the order of 100 nm.

Optical properties of thin Cu2ZnSnS4, films produced by RF magnetron sputtering / Maistruk, E. V.; Mar'Yanchuk, P. D.; Solovan, M. N.; Pinna, F.; Tresso, E.. - In: OPTICS AND SPECTROSCOPY. - ISSN 0030-400X. - 123:1(2017), pp. 38-43. [10.1134/S0030400X17070153]

Optical properties of thin Cu2ZnSnS4, films produced by RF magnetron sputtering

Pinna F.;Tresso E.
2017

Abstract

Optical properties of thin Cu2ZnSnS4 films produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 26 μm. The optical band-gap width depending on substrate temperature is estimated; in optimal modes, it is equal to 1.47 eV. The study of electrical properties shows that Cu2ZnSnS4 possesses low charge-carrier mobility, μ = 1.9 cm2/(V s), at room temperature and hole concentration р = 5 × 1018 cm–3. Electron microscopy shows that the film possesses a polycrystalline structure with a crystallite size on the order of 100 nm.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2836207