Optical properties of thin Cu2ZnSnS4 films produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 26 μm. The optical band-gap width depending on substrate temperature is estimated; in optimal modes, it is equal to 1.47 eV. The study of electrical properties shows that Cu2ZnSnS4 possesses low charge-carrier mobility, μ = 1.9 cm2/(V s), at room temperature and hole concentration р = 5 × 1018 cm–3. Electron microscopy shows that the film possesses a polycrystalline structure with a crystallite size on the order of 100 nm.
Optical properties of thin Cu2ZnSnS4, films produced by RF magnetron sputtering / Maistruk, E. V.; Mar'yanchuk, P. D.; Solovan, M. N.; Pinna, F.; Tresso, E.. - In: OPTICS AND SPECTROSCOPY. - ISSN 0030-400X. - 123:1(2017), pp. 38-43. [10.1134/S0030400X17070153]
|Titolo:||Optical properties of thin Cu2ZnSnS4, films produced by RF magnetron sputtering|
|Data di pubblicazione:||2017|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1134/S0030400X17070153|
|Appare nelle tipologie:||1.1 Articolo in rivista|