The ability to monitor temperature variations during the actual operation of power modules is key to reliability investigations and the development of lifetime prediction strategies. This paper proposes an original solution, specifically devised with novel fast-switching silicon carbide (SiC) power MOSFETs in mind. The results show ability to track temperature variations resulting from active power cycling of the devices, including high speed transients, thus enabling to discriminate among different potential failure mechanisms. Validation of the proposed methodology and its accuracy is carried out with the support of infrared thermography.
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules / Stella, Fausto; Olanrewaju, Olufisayo; Yang, Zineng; Castellazzi, Alberto; Pellegrino, GIAN - MARIO LUIGI. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 88-90C:MR13080(In corso di stampa), pp. 615-619.
|Titolo:||Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules|
|Data di pubblicazione:||Being printed|
|Appare nelle tipologie:||1.1 Articolo in rivista|