Microwave measurements of the London penetration depth and critical temperature Tc were used to show evidence of a disordered-driven transition from s± to s++ order parameter symmetry in optimally doped Ba(Fe1-xRhx)2As2 single crystals, where disorder was induced by means of 3.5 MeV proton irradiation. Signatures of such a transition, as theoretically predicted [V. D. Efremov et al., Phys. Rev. B 84, 180512(R) (2011)], are found as a drop in the low-temperature values of the London penetration depth and a virtually disorder-independent superconducting Tc. We show how these experimental observations can be described by multiband Eliashberg calculations in which the effect of disorder is accounted for in a suitable way. To this aim, an effective two-band approach is adopted, allowing us to treat disorder in a range between the Born approximation and the unitary limit.
Disorder-Driven Transition from s± to s++ Superconducting Order Parameter in Proton Irradiated Ba(Fe1−xRhx)2As2 Single Crystals / Ghigo, G.; Torsello, Daniele; Ummarino, G. A.; Gozzelino, L.; Tanatar, M. A.; Prozorov, R.; Canfield, P. C.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 121:10(2018), p. 107001. [10.1103/PhysRevLett.121.107001]
Disorder-Driven Transition from s± to s++ Superconducting Order Parameter in Proton Irradiated Ba(Fe1−xRhx)2As2 Single Crystals
Ghigo, G.;TORSELLO, DANIELE;Ummarino, G. A.;Gozzelino, L.;
2018
Abstract
Microwave measurements of the London penetration depth and critical temperature Tc were used to show evidence of a disordered-driven transition from s± to s++ order parameter symmetry in optimally doped Ba(Fe1-xRhx)2As2 single crystals, where disorder was induced by means of 3.5 MeV proton irradiation. Signatures of such a transition, as theoretically predicted [V. D. Efremov et al., Phys. Rev. B 84, 180512(R) (2011)], are found as a drop in the low-temperature values of the London penetration depth and a virtually disorder-independent superconducting Tc. We show how these experimental observations can be described by multiband Eliashberg calculations in which the effect of disorder is accounted for in a suitable way. To this aim, an effective two-band approach is adopted, allowing us to treat disorder in a range between the Born approximation and the unitary limit.File | Dimensione | Formato | |
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https://hdl.handle.net/11583/2712987