Flux–Charge Memristor Model for Phase Change Memory

Phase-change memory (PCM) is one of the most promising non-volatile memory technologies and is finding applications in areas such as storage-class memory and emerging non-von Neumann computing systems. Even though powerful physics-based models have been developed for these devices, there is a lack of simple and accurate circuit models to describe these elements. In this brief, we exploit memristor theory to obtain a simple and reliable circuit model based on electrical variables such as charge and flux. This model is based on experimental measurements of PCM devices fabricated in the 90 nm technology node.