In this work we analyze the effects of electromagnetic-induced interferences conveyed at the input of a transimpedance CMOS operational amplifier. In particular, it will be highlighted that transimpedance amplifiers natural exhibit a lower EMI susceptibility compared to common voltage-feedback opamps. Moreover, it will be shown through simulations that a careful circuit design can lead to opamps with a practically vanishing EMI susceptibility.

Design of a low EMI susceptibility CMOS transimpedance operational amplifier / Setti, G.; Speciale, N.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 38:6-8(1998), pp. 1143-1148. [10.1016/s0026-2714(98)00109-7]

Design of a low EMI susceptibility CMOS transimpedance operational amplifier

SETTI G.;
1998

Abstract

In this work we analyze the effects of electromagnetic-induced interferences conveyed at the input of a transimpedance CMOS operational amplifier. In particular, it will be highlighted that transimpedance amplifiers natural exhibit a lower EMI susceptibility compared to common voltage-feedback opamps. Moreover, it will be shown through simulations that a careful circuit design can lead to opamps with a practically vanishing EMI susceptibility.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2696612
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