Josephson-junction devices such as suitably designed nanoSQUIDs can provide a sensing element for micro and nanoelectronics. In this paper, the properties of such device must be tailored in order to have an optimal response. In particular, it relates its temperature stability, and a comparatively weak dependence of the critical supercurrent Ic on temperature T in the working range. To realize it, a concave upward Ic-versus-T curve is required. The aim of this paper was to study conditions when such temperature dependence can be realized in four-layered S/N-I-S Josephson junctions, mantaining the overdamped behavior. We show how the shape of the Ic-versus-T dependence can provide important information about the strength of the S/N proximity coupling.

Superconducting and Dissipative Characteristics of Overdamped SNIS Josephson Junctions for Sensing Applications / Lacquaniti, Vincenzo; Cassiago, Cristina; De Leo, Natascia; Fretto, MATTEO ANDREA FRANCESCO; Durandetto, Paolo; Zhitlukhina, Elena; Belogolovskii, Mikhail. - In: IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY. - ISSN 1051-8223. - 27:4(2017), pp. 1-5. [10.1109/TASC.2016.2642045]

Superconducting and Dissipative Characteristics of Overdamped SNIS Josephson Junctions for Sensing Applications

FRETTO, MATTEO ANDREA FRANCESCO;DURANDETTO, PAOLO;
2017

Abstract

Josephson-junction devices such as suitably designed nanoSQUIDs can provide a sensing element for micro and nanoelectronics. In this paper, the properties of such device must be tailored in order to have an optimal response. In particular, it relates its temperature stability, and a comparatively weak dependence of the critical supercurrent Ic on temperature T in the working range. To realize it, a concave upward Ic-versus-T curve is required. The aim of this paper was to study conditions when such temperature dependence can be realized in four-layered S/N-I-S Josephson junctions, mantaining the overdamped behavior. We show how the shape of the Ic-versus-T dependence can provide important information about the strength of the S/N proximity coupling.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2684638
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