We report modifications of the temperature-dependent transport properties of MoS2 thin flakes via field-driven ion intercalation in an electric double layer transistor. We find that intercalation with Li+ ions induces the onset of an inhomogeneous superconducting state. Intercalation with K+ leads instead to a disorder-induced incipient metal-to-insulator transition. These findings suggest that similar ionic species can provide access to different electronic phases in the same material.
Strong dopant dependence of electric transport in ion-gated MoS2 / Piatti, Erik; Chen, Qihong; Ye, Jianting. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 111:1(2017), p. 013106.
Titolo: | Strong dopant dependence of electric transport in ion-gated MoS2 |
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Data di pubblicazione: | 2017 |
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Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.4992477 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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Piatti Strong dopant dependence of electric transport in ion-gated MoS2 Appl. Phys. Lett. 111, 013106 (2017).pdf | Articolo principale - versione editoriale | 2a Post-print versione editoriale / Version of Record | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2676058