Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach / D’Ortenzi, L.; Monsù, R.; Cara, Eleonora; Fretto, MATTEO ANDREA FRANCESCO; Kara, SEIFEDDINE A; Rezvani, S. J.; L. Boarino, 5; Boarino, L.. - In: NANOSCALE RESEARCH LETTERS. - ISSN 1931-7573. - 11:1(2016), p. 468.
Titolo: | Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach |
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Data di pubblicazione: | 2016 |
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Digital Object Identifier (DOI): | http://dx.doi.org/10.1186/s11671-016-1689-x |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11583/2675417