We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as ≈ 2.8 × 10^15 cm−2 in the active channel of the devices. We report a reversible modulation of the superconducting transition temperature (either positive or negative depending on the sign of the gate voltage) whose magnitude and sign are incompatible with the confinement of the perturbed superconducting state to a thin surface layer, as would be expected within a naive screening model.
|Titolo:||Superconducting Transition Temperature Modulation in NbN via EDL Gating|
|Data di pubblicazione:||2016|
|Digital Object Identifier (DOI):||10.1007/s10948-015-3306-0|
|Appare nelle tipologie:||1.1 Articolo in rivista|