Memristive nanoscale devices can generate intense fields by the application of relatively low voltages. This peculiar property allows fast, nonvolatile, and low-energy electrical switching as well as the possibility of retaining the internal resistance state according to the history of applied voltage and current. Memristors are predicted to revolutionize the current approaches in computer electronic architecture with their application, for instance, as resistive random access memory and for neuromorphic artificial intelligence. The use of graphene nanostructures for memristive switching systems offers an exciting alternative to other classes of materials, such as transition metal oxide and organic thin films.

Graphene nanostructures for memristive devices / Porro, Samuele. - ELETTRONICO. - (2015), pp. 1-10. [10.1007/978-94-007-6178-0_101030-1]

Graphene nanostructures for memristive devices

PORRO, SAMUELE
2015

Abstract

Memristive nanoscale devices can generate intense fields by the application of relatively low voltages. This peculiar property allows fast, nonvolatile, and low-energy electrical switching as well as the possibility of retaining the internal resistance state according to the history of applied voltage and current. Memristors are predicted to revolutionize the current approaches in computer electronic architecture with their application, for instance, as resistive random access memory and for neuromorphic artificial intelligence. The use of graphene nanostructures for memristive switching systems offers an exciting alternative to other classes of materials, such as transition metal oxide and organic thin films.
978-94-007-6178-0
Encyclopedia of Nanotechnology
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2626716
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