In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 1e9 and 1e13 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.

Numerical analysis of Si and GaAs solar cells exposed to space radiation / Cappelletti, M.; Casas, G.; Cedola, ARIEL PABLO; Peltzer, y. Blancá E.. - In: REVISTA IEEE AMÉRICA LATINA. - ISSN 1548-0992. - 11:(2013), pp. 268-273. [10.1109/TLA.2013.6502815]

Numerical analysis of Si and GaAs solar cells exposed to space radiation

CEDOLA, ARIEL PABLO;
2013

Abstract

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 1e9 and 1e13 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2604775
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