In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 1e9 and 1e13 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Numerical analysis of Si and GaAs solar cells exposed to space radiation / Cappelletti M.; Casas G.; Cedola A.; Peltzer y Blancá E.. - In: REVISTA IEEE AMÉRICA LATINA. - ISSN 1548-0992. - 11(2013), pp. 268-273. [10.1109/TLA.2013.6502815]
Titolo: | Numerical analysis of Si and GaAs solar cells exposed to space radiation | |
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Data di pubblicazione: | 2013 | |
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Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TLA.2013.6502815 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11583/2604775