We perform first-principles Density Functional Theory calculationsfortheamorphousIn2O3/InN(110̅0)heterostructure.Our results suggest that the interface between InN and its native amorphous oxide is a type “I” interface as observed in X-ray photoemission spectroscopy data for the same materials in the crystalline form. The microscopic analysis of the system reveals the presence of peculiar structural features localized at the interface, such as the formation of N−O bonds and the existence of N dangling bonds, that are responsible for donor states. These findings shed light on the origin of the electron accumulation layer occurring at the interface in spontaneously oxidized InN nanowires, recently associated with the observed increase in conductivity for such systems.
Origin of the Accumulation Layer at the InN/a-In2O3Interface / Antonio Aliano;Giancarlo Cicero;Alessandra Catellani. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 7(2015), pp. 5415-5419. [10.1021/am508944s]
|Titolo:||Origin of the Accumulation Layer at the InN/a-In2O3Interface|
|Data di pubblicazione:||2015|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1021/am508944s|
|Appare nelle tipologie:||1.1 Articolo in rivista|