The use of quantum dots (QDs) in III-V solar cells is an attractive technology to enhance the power conversion efficiency of both single- and multi-junction solar cells. Recently, very interesting results have been demonstrated by combining the use of QD and modulation doping. However, a general consensus on the actual potentiality of the QD approach in terms of achievable efficiency improvement has not yet been reached, either due to the relative immaturity of the technology and because of several uncertainties about the detailed underlying physics, that involve a complex interplay between microscopic and nanoscopic physical processes. To tackle this problem, we have developed an ad hoc, multiscale oriented, modelling approach that couples a drift-diffusion transport model with a detailed description of QD carrier dynamics. In this contribution we present an investigation of the photovoltaic performance of representative GaAs-based QDSCs reported in literature, demonstrating a good accuracy in predicting typical QDSC photovoltaic characteristics. Based on such an approach, a deeper insight is provided on the impact of material and design parameters on the device performance.

Investigation on the Photovoltaic Performance of Quantum Dot Solar Cells through Self-Consistent Modeling of Transport and Photoelectron Processes / Cappelluti, Federica; Gioannini, Mariangela. - (2014). (Intervento presentato al convegno 29th European PV Solar Energy Conference tenutosi a Amsterdam (The Netherlands) nel 22-26 Settembre 2014).

Investigation on the Photovoltaic Performance of Quantum Dot Solar Cells through Self-Consistent Modeling of Transport and Photoelectron Processes

CAPPELLUTI, Federica;GIOANNINI, Mariangela
2014

Abstract

The use of quantum dots (QDs) in III-V solar cells is an attractive technology to enhance the power conversion efficiency of both single- and multi-junction solar cells. Recently, very interesting results have been demonstrated by combining the use of QD and modulation doping. However, a general consensus on the actual potentiality of the QD approach in terms of achievable efficiency improvement has not yet been reached, either due to the relative immaturity of the technology and because of several uncertainties about the detailed underlying physics, that involve a complex interplay between microscopic and nanoscopic physical processes. To tackle this problem, we have developed an ad hoc, multiscale oriented, modelling approach that couples a drift-diffusion transport model with a detailed description of QD carrier dynamics. In this contribution we present an investigation of the photovoltaic performance of representative GaAs-based QDSCs reported in literature, demonstrating a good accuracy in predicting typical QDSC photovoltaic characteristics. Based on such an approach, a deeper insight is provided on the impact of material and design parameters on the device performance.
2014
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2543942
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo