A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open loop techniques in a cost effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith Chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-THz frequencies, and W-band MMIC design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-THz integrated circuits. First measure- ments performed on high performance InP double heterojunction bipolar transistors (DHBTs) and GaN high electron mobility transistors (HEMTs) are presented.

A W-Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques / Teppati, Valeria; Hansruedi, Benedickter; Diego, Marti; Marco, Garelli; Stefano, Tirelli; Rickard, Lovblom; Ralf, Fluckiger; Maria, Alexandrova; Olivier, Ostinelli; Colombo R., Bolognesi. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 62:(2014), pp. 148-153. [10.1109/TMTT.2013.2292042]

A W-Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques

TEPPATI, VALERIA;
2014

Abstract

A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open loop techniques in a cost effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith Chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-THz frequencies, and W-band MMIC design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-THz integrated circuits. First measure- ments performed on high performance InP double heterojunction bipolar transistors (DHBTs) and GaN high electron mobility transistors (HEMTs) are presented.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2536695
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