This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI / Aiello, Orazio; Fiori, Franco. - In: SENSORS. - ISSN 1424-8220. - ELETTRONICO. - 2:13(2013), pp. 1856-1871. [10.3390/s130201856]

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

AIELLO, ORAZIO;FIORI, Franco
2013

Abstract

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2506030
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