The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached more than 4 × 10^15 charges/cm^2. At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (>=25 nm), results can be nicely explained within a free-electron model with parallel resistive channels. The huge charge injections achieved make this particular field-effect technique very promising for a vast variety of materials such as unconventional superconductors, graphene and 2D-like materials.

Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating / Tortello, Mauro; Sola, Alessandro; Sharda, Kanudha; Paolucci, F.; Nair, JIJEESH RAVI; Gerbaldi, Claudio; Daghero, Dario; Gonnelli, Renato. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 269:(2013), pp. 17-22. [10.1016/j.apsusc.2012.09.157]

Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating

TORTELLO, MAURO;SOLA, ALESSANDRO;SHARDA, KANUDHA;NAIR, JIJEESH RAVI;GERBALDI, CLAUDIO;DAGHERO, Dario;GONNELLI, Renato
2013

Abstract

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached more than 4 × 10^15 charges/cm^2. At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (>=25 nm), results can be nicely explained within a free-electron model with parallel resistive channels. The huge charge injections achieved make this particular field-effect technique very promising for a vast variety of materials such as unconventional superconductors, graphene and 2D-like materials.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2503385
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