An efficient, CAD-oriented model for the characteristic parameters of multiconductor buses in high-speed digital GaAs ICs

The paper presents a unified, quasi-TEM closed-form exact characterization of coplanar multiconductor buses for digital GaAs ICs. The model allows for buses of arbitrary geometry (i.e., having arbitrary strip widths and spacings) and accounts for the coupling between nonneighboring conductors. The analysis is based on a dual conformal mapping technique which leads to exact closed-form expressions for the per-unit-length capacitance and inductance matrices of the line in terms of hyperelliptic integrals, whose numerical evaluation can be efficiently performed through Gauss-Chebyshev quadrature formulae. Results are presented to demonstrate the accuracy and efficiency of the approach.