Archivio Istituzionale della RicercaThe errors which are induced by radio-frequency interference (RFI) in switched-capacitor (SC) circuits are discussed and the main role played by the distortion of MOS switches in the on-state is highlighted. Furthermore, a new simple analytical model, which enables one to predict RFI-induced errors in SC circuits is proposed and it is validated by the comparison of its predictions with time-domain computer simulation results.
RFI-Induced Distortion in Switched-Capacitor Circuits / Crovetti, Paolo Stefano; Fiori, Franco. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS. - ISSN 1549-8328. - STAMPA. - 53:4(2006), pp. 784-794. [10.1109/TCSI.2005.861902]
RFI-Induced Distortion in Switched-Capacitor Circuits
CROVETTI, Paolo Stefano;FIORI, Franco
2006
Abstract
The errors which are induced by radio-frequency interference (RFI) in switched-capacitor (SC) circuits are discussed and the main role played by the distortion of MOS switches in the on-state is highlighted. Furthermore, a new simple analytical model, which enables one to predict RFI-induced errors in SC circuits is proposed and it is validated by the comparison of its predictions with time-domain computer simulation results.
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SC_art_24012005.pdf
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https://hdl.handle.net/11583/2498672