The authors have studied impact ionization with a quantum-mechanical approach beyond the Boltzmann equation. The theoretical background is a two-band density-matrix formalism where, in an electron-hole picture, particle conservation means that only the difference of electrons and holes remains constant. A quantum Monte Carlo procedure has been extended, in the second-quantization formalism, to include variable numbers of electrons and holes. The second-order correction to the number of electrons as a function of time has been evaluated. For delta-like initial distribution functions, quantum-mechanical and semiclassical results are compared. In contrast to a semiclassical treatment, nonconserving energy transitions at short times and the intracollisional field effect influence impact ionization above and below threshold.
A quantum description of impact ionization in semiconductors / Quade, W.; Rossi, Fausto; Jacoboni, C.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 7:3B(1992), pp. B502-B505. [10.1088/0268-1242/7/3B/131]
A quantum description of impact ionization in semiconductors
ROSSI, FAUSTO;
1992
Abstract
The authors have studied impact ionization with a quantum-mechanical approach beyond the Boltzmann equation. The theoretical background is a two-band density-matrix formalism where, in an electron-hole picture, particle conservation means that only the difference of electrons and holes remains constant. A quantum Monte Carlo procedure has been extended, in the second-quantization formalism, to include variable numbers of electrons and holes. The second-order correction to the number of electrons as a function of time has been evaluated. For delta-like initial distribution functions, quantum-mechanical and semiclassical results are compared. In contrast to a semiclassical treatment, nonconserving energy transitions at short times and the intracollisional field effect influence impact ionization above and below threshold.Pubblicazioni consigliate
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https://hdl.handle.net/11583/2498650
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