By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser photoexcitation, we show that carrier cooling due to phonon emission and internal thermalization due to electron-electron interaction are significantly decreased with respect to bulk systems. This decreased thermalization is mainly attributed to the reduced efficiency of intersubband processes and to the reduced effect of electron-electron intrasubband scattering.

Reduced carrier cooling and thermalization in semiconductor quantum wires / Rota, L.; Rossi, Fausto; Goodnick, S. M.; Lugli, P.; Molinari, E.; Porod, W.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 47:3(1993), pp. 1632-1635. [10.1103/PhysRevB.47.1632]

Reduced carrier cooling and thermalization in semiconductor quantum wires

ROSSI, FAUSTO;
1993

Abstract

By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser photoexcitation, we show that carrier cooling due to phonon emission and internal thermalization due to electron-electron interaction are significantly decreased with respect to bulk systems. This decreased thermalization is mainly attributed to the reduced efficiency of intersubband processes and to the reduced effect of electron-electron intrasubband scattering.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2498619
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