The ultrafast dynamics of photoexcited carriers in semiconductor superlattices is studied theoretically on the basis of a Monte Carlo solution of the coupled Boltzmann transport equations for electrons and holes. The approach allows a kinetic description of the relevant interaction mechanisms such as intra- miniband and interminiband carrier-phonon scattering processes. The energy relaxation of photoexcited carriers, as well as their vertical transport, is investigated in detail. The effects of the multiminiband nature of the superlattice spectrum on the energy relaxation process are discussed with particular emphasis on the presence of Bloch oscillations induced by an external electric field. The analysis is performed for different superlattice structures and excitation conditions. It shows the dominant role of carrier–polar-optical-phonon interaction in determining the nature of the carrier dynamics in the low-density limit. In particular, the miniband width, compared to the phonon energy, turns out to be a relevant quantity in predicting the existence of Bloch oscillations.
Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis / Rossi F.; Meier T.; Thomas P.; Koch SW.; Selbmann PE.; Molinari E.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 51:23(1995), pp. 16943-16953. [10.1103/PhysRevB.51.16943]
|Titolo:||Ultrafast carrier relaxation and vertical-transport phenomena in semiconductor superlattices: A Monte Carlo analysis|
|Data di pubblicazione:||1995|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1103/PhysRevB.51.16943|
|Appare nelle tipologie:||1.1 Articolo in rivista|