The dynamics of strongly localized optical excitations in semiconductors is studied including electron-phonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches.
Phonon-induced dephasing of localized optical excitations / Brinkmann D.; Rossi F.; Koch SW.; Thomas P.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 54:4(1996), pp. 2561-2570. [10.1103/PhysRevB.54.2561]
|Titolo:||Phonon-induced dephasing of localized optical excitations|
|Data di pubblicazione:||1996|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1103/PhysRevB.54.2561|
|Appare nelle tipologie:||1.1 Articolo in rivista|