Archivio Istituzionale della RicercaA microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynamics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the origin of excitonic luminescence in time-resolved experiments. In particular, we address the problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively.
Phonon-assisted exciton formation and relaxation in GaAs/Al_xGa_{1-x}As quantum wells / Gulia, M.; Rossi, Fausto; Molinari, E.; Selbmann, P. E.; Lugli, P.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 55:24(1997), pp. 16049-16062. [10.1103/PhysRevB.55.R16049]
Phonon-assisted exciton formation and relaxation in GaAs/Al_xGa_{1-x}As quantum wells
ROSSI, FAUSTO;
1997
Abstract
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynamics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the origin of excitonic luminescence in time-resolved experiments. In particular, we address the problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively.
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https://hdl.handle.net/11583/2498493
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