Archivio Istituzionale della RicercaExciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation.
Exciton formation and relaxation in GaAs epilayers / Gurioli, M.; Borri, P.; Colocci, M.; Gulia, M.; Rossi, Fausto; Molinari, E.; Selbmann, P. E.; Lugli, P.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 58:20(1998), pp. 13403-13406. [10.1103/PhysRevB.58.R13403]
Exciton formation and relaxation in GaAs epilayers
ROSSI, FAUSTO;
1998
Abstract
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved photoluminescence techniques. It is found that the time evolution of the free exciton luminescence, nonresonantly excited at low temperature and low intensity, is extremely slow, with a rise time of the order of 1 ns and a decay time of several ns. Simulations based on Monte Carlo solution of the set of coupled Boltzmann-like equations for free carriers and excitons show a nice agreement with the experimental data, and suggest a dominant role played by acoustic phonons in the exciton relaxation.
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https://hdl.handle.net/11583/2498483
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