We analyse the electronic and phononic dynamics in GaAs and GaN quantum dot structures due to their interaction with acoustic phonons. We compare results for two specific quantum dot heterostructures which have been proposed as hardware building blocks for a quantum computer in recent quantum computation/information schemes. In particular, we are interested in the loss of coherence after excitation with an ultrashort laser pulse and in the dynamics of phonons which are created as a consequence of the optical excitation process. Our results are non-perturbative with respect to both carrier–phonon and carrier–light interaction and therefore include multi-phonon processes of arbitrary order. We find that, due to different quantum dot sizes, involved electric fields and material parameters, the decoherence is stronger in the GaN dots. The interplay of these effects also strongly determines the details of the created phonon occupation, which splits into two parts: one remains in the vicinity of the dot and forms a stable polaron and another leaves the dot as a phononic wave packet travelling with the velocity of sound. Due to the dot geometry and the carrier–phonon coupling matrix elements this phonon emission is strongly anisotropic.
Ultrafast carrier and phonon dynamics in GaAs and GaN quantum dots / Krummheuer B.; Vagov A.; Kuhn T.; Glanemann M.; Axt VM.; D'Amico I.; Rossi F.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 19:4(2004), pp. S31-S33. [10.1088/0268-1242/19/4/012]
|Titolo:||Ultrafast carrier and phonon dynamics in GaAs and GaN quantum dots|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1088/0268-1242/19/4/012|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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