Archivio Istituzionale della RicercaWe report the large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with fT and fMAX cutoff frequencies as high as 380 and 320 GHz, respectively. Measurements were performed at 40 GHz in a passive load-pull system to characterize the output power and power-added-efficiency (PAE) performance. A PAE of 60% with an output power of 10 dBm (corresponding to power densities of approximately 870 mW/mm and 1.45 mW/μm2) was achieved in class AB operation. This excellent performance can be attributed to the low offset and knee voltages associated with the InP/GaAsSb type-II heterojunctions. To the best of our knowledge, the present performance exceeds published state-of-the-art results for HBTs at a frequency of 40 GHz.
Highly efficient InP/GaAsSb DHBTs with 62% power-added efficiency at 40 GHz / Teppati, Valeria; Zeng, Y.; Ostinelli, O.; Bolognesi, C. R.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 32:7(2011), pp. 886-888. [10.1109/LED.2011.2143690]
Highly efficient InP/GaAsSb DHBTs with 62% power-added efficiency at 40 GHz
TEPPATI, VALERIA;
2011
Abstract
We report the large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with fT and fMAX cutoff frequencies as high as 380 and 320 GHz, respectively. Measurements were performed at 40 GHz in a passive load-pull system to characterize the output power and power-added-efficiency (PAE) performance. A PAE of 60% with an output power of 10 dBm (corresponding to power densities of approximately 870 mW/mm and 1.45 mW/μm2) was achieved in class AB operation. This excellent performance can be attributed to the low offset and knee voltages associated with the InP/GaAsSb type-II heterojunctions. To the best of our knowledge, the present performance exceeds published state-of-the-art results for HBTs at a frequency of 40 GHz.
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https://hdl.handle.net/11583/2496698
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