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EnglishA deep theoretical discussion proves that in Joglekar's and Biolek's models the memductance-flux relation of a memristor driven by a sign-varying voltage source may only exhibit single-valuedness and multi-valuedness respectively. This manuscript derives a novel boundary condition-based Model for memristor nanostructures. Unlike previous models, the proposed one allows for closed-form solutions. More importantly, subject to the nonlinear behavior under exam, this model enables a suitable tuning of boundary conditions, which may result in the detection of both single-valued and multi-valued memductance-flux relations under certain sign-varying inputs of interest. The large class of modeled dynamics include all behaviors reported in the legendary paper revealing the existence of memory-resistance at the nano scale.
A boundary condition-based approach to the modeling of memristive nano-structures / CORINTO F.; ASCOLI A.. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS. - ISSN 1549-8328. - 59:11(2012), pp. 2713-2726.
| Titolo: | A boundary condition-based approach to the modeling of memristive nano-structures |
| Autori: | |
| Data di pubblicazione: | 2012 |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TCSI.2012.2190563 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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|---|---|---|---|---|
| 06198300.pdf | - © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. - link all'abstract della versione editoriale pubblicato in IEEE Xplore®, o al DOI | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2484636
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