A deep theoretical discussion proves that in Joglekar's and Biolek's models the memductance-flux relation of a memristor driven by a sign-varying voltage source may only exhibit single-valuedness and multi-valuedness respectively. This manuscript derives a novel boundary condition-based Model for memristor nanostructures. Unlike previous models, the proposed one allows for closed-form solutions. More importantly, subject to the nonlinear behavior under exam, this model enables a suitable tuning of boundary conditions, which may result in the detection of both single-valued and multi-valued memductance-flux relations under certain sign-varying inputs of interest. The large class of modeled dynamics include all behaviors reported in the legendary paper revealing the existence of memory-resistance at the nano scale.
A boundary condition-based approach to the modeling of memristive nano-structures / CORINTO F.; ASCOLI A.. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS. - ISSN 1549-8328. - 59:11(2012), pp. 2713-2726.
Titolo: | A boundary condition-based approach to the modeling of memristive nano-structures |
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Data di pubblicazione: | 2012 |
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Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TCSI.2012.2190563 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11583/2484636