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EnglishWe report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF3 gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing doping level. Both effects can be ascribed to the electron-electron correlation, which, on the one hand, reduces the electron-phonon coupling strength and, on the other hand, affects the probability of the double-resonance Raman process.
| Titolo: | Raman signature of electron-electron correlation in chemically doped few-layer graphene |
| Autori: | |
| Data di pubblicazione: | 2011 |
| Rivista: | |
| Abstract: | We report an experimental Raman study of few-layer graphene after chemical doping achieved by a p...lasma process in CHF3 gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing doping level. Both effects can be ascribed to the electron-electron correlation, which, on the one hand, reduces the electron-phonon coupling strength and, on the other hand, affects the probability of the double-resonance Raman process. |
| Digital Object Identifier (DOI): | 10.1103/PhysRevB.83.241401 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11583/2461184
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