We report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF3 gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing doping level. Both effects can be ascribed to the electron-electron correlation, which, on the one hand, reduces the electron-phonon coupling strength and, on the other hand, affects the probability of the double-resonance Raman process.
Raman signature of electron-electron correlation in chemically doped few-layer graphene / Bruna, Matteo; Borini, Stefano Marco. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 83:(2011). [10.1103/PhysRevB.83.241401]
|Titolo:||Raman signature of electron-electron correlation in chemically doped few-layer graphene|
|Data di pubblicazione:||2011|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1103/PhysRevB.83.241401|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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