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EnglishBased on the analysis of carrier dynamics in quantum dots (QDs), the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three energy levels join in lasing. A simulation is conducted by MATLAB according to the rate equation model we obtain. The simulation results of PI characteristic, gain characteristic and intensity modulation response are reasonable. Also, the relations between the left facet reflectivity of laser cavity and threshold current as well as modulation bandwidth are studied. It is indicated that the left facet reflectivity increasing can result in reduced threshold current and improved modulation bandwidth, which is in accordance with experimental results. The internal mechanism of QD lasers is fully described with the rate equation model, which is helpful for QD lasers research. Document code: A Article ID: 1673-
Modeling and simulation of InAs/GaAs quantum dot lasers / LV Shao-feng; Ivo Montrosset; Mariangela Gioannini; SONG Shu-zhong; MA Jian-wei. - In: OPTOELECTRONICS LETTERS. - ISSN 1673-1905. - STAMPA. - 7:2(2011), pp. 122-125. [10.1007/s11801-011-0102-3]
| Titolo: | Modeling and simulation of InAs/GaAs quantum dot lasers | |
| Autori: | ||
| Data di pubblicazione: | 2011 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1007/s11801-011-0102-3 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 0ptoeln lett 2011.pdf | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2460450
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