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EnglishOptimization of dark current is a key technological issue to be addressed in order to improve quantum-well infrared photodetector (QWIP) performance. We develop a model for the description of current–voltage curves in mid-infrared QWIPs, which usually span a range of electric fields in which both low-field as well as high-field carrier transport effects are visible, especially at low temperatures. The model separates the I–V curve into a low-field and a high-field region allowing us to identify and separate the effects ascribed to miniband transport and carrier localization, respectively. We then compare simulations with our measurements of the I–V curves of mid-ir QWIPs finding a good quantitative agreement between theory and experiment.
Modeling of dark current in mid-infrared quantum-well infrared photodetectors / CASTELLANO F.; IOTTI R.C.; ROSSI F.; FAIST J.; LHUILLIER E.; BERGER V.. - In: INFRARED PHYSICS & TECHNOLOGY. - ISSN 1350-4495. - STAMPA. - 52:6(2009), pp. 220-223. [10.1016/j.infrared.2009.05.031]
| Titolo: | Modeling of dark current in mid-infrared quantum-well infrared photodetectors | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.infrared.2009.05.031 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| Castellano-Iotti-Rossi-IPT_52_220_2009.pdf | 2. Post-print / Author's Accepted Manuscript | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2303027
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