A systematic analysis of the influence of the capture, inter-level relaxation and exciton dephasing time constants on the dynamic behavior of quantum dot Fabry-Perot semiconductor lasers is done taking into account the lasing from the ground and excited states. The simulation results show that the carrier time constants studied influence significantly the static characteristic of the laser, its switch-on response and the pulses generated by gain-switching.

Numerical analysis of the effects of carrier dynamics on the switch-on and gain-switching of quantum dot lasers / PEREIRA THE', GEORGE ANDRE'; Gioannini, Mariangela; Montrosset, Ivo. - In: OPTICAL AND QUANTUM ELECTRONICS. - ISSN 0306-8919. - 40:(2009), pp. 1111-1116. [10.1007/s11082-009-9310-5]

Numerical analysis of the effects of carrier dynamics on the switch-on and gain-switching of quantum dot lasers

PEREIRA THE', GEORGE ANDRE';GIOANNINI, Mariangela;MONTROSSET, Ivo
2009

Abstract

A systematic analysis of the influence of the capture, inter-level relaxation and exciton dephasing time constants on the dynamic behavior of quantum dot Fabry-Perot semiconductor lasers is done taking into account the lasing from the ground and excited states. The simulation results show that the carrier time constants studied influence significantly the static characteristic of the laser, its switch-on response and the pulses generated by gain-switching.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2287017
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