A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the e®ective dielectric constant along the line, for different combinations of the switches is demonstrated.

Tunable periodic microstrip structure on GaAs wafer / Matekovits, Ladislau; M., Heimlich; K., Esselle. - In: ELECTROMAGNETIC WAVES. - ISSN 1559-8985. - ELETTRONICO. - 97:(2009), pp. 1-10. [10.2528/PIER09091001]

Tunable periodic microstrip structure on GaAs wafer

MATEKOVITS, Ladislau;
2009

Abstract

A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the e®ective dielectric constant along the line, for different combinations of the switches is demonstrated.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2281403
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