We propose and theoretically investigate a semiconductor-based terahertz-detector design exploiting a multiphoton absorption strategy through a bound-to-bound-to-continuum scheme. Our results demonstrate that such a multisubband architecture may access values of the background-limited infrared photodetection temperature, significantly higher than those of conventional quantum well infrared photodetectors operating at the same frequency, and therefore could represent a better alternative to the latter in the terahertz spectral region.
|Titolo:||Improving the operation temperature of semiconductor-based Terahertz photodetectors: A multiphoton design|
|Data di pubblicazione:||2008|
|Digital Object Identifier (DOI):||10.1063/1.2890167|
|Appare nelle tipologie:||1.1 Articolo in rivista|